| PART |
Description |
Maker |
| APT5016BLL APT5016SLL |
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS
POWER MOS 7 500V 30A 0.160 Ohm
|
Advanced Power Technology
|
| APT1201R4BLL APT1201R4SLL |
POWER MOS 7 1200V 9A 1.400 Ohm
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
|
Advanced Power Technology Ltd.
|
| RHRG30120CC FN3411 |
30A/ 1200V Hyperfast Dual Diode
30A, 1200V Hyperfast Dual Diode
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| RURG30120CC FN3400 |
30A/ 1200V Ultrafast Dual Diode
30A, 1200V Ultrafast Dual Diode
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| APT40M70JVFR |
53 A, 400 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET
Power FREDFET; Package: ISOTOP®; ID (A): 53; RDS(on) (Ohms): 0.07; BVDSS (V): 400;
POWER MOS V FREDFET
|
MICROSEMI POWER PRODUCTS GROUP
ADPOW[Advanced Power Technology]
|
| RJK03M5DPA-00-J5A |
30V, 30A, 6.5mmax.N Channel Power MOS FET
|
Renesas Electronics Corporation
|
| RURP30120 FN3397 |
From old datasheet system
30A, 1200V Ultrafast Diode
|
INTERSIL[Intersil Corporation]
|
| RJK0654DPB-00-J5 RJK0654DPB-15 |
60V, 30A, 8.3m nax. Silicon N Channel Power MOS FET Power Switching
60V, 30A, 8.3m?nax. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| APT12067JLL |
POWER MOS 7 1200V 17A 0.670 Ohm
|
Advanced Power Technology
|
| RJK60S7DPK-M0 RJK60S7DPK-M0-T0 |
600V -30A - SJ MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK60S7DPQ-E0-T2 |
600V -30A - SJ MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
